3D Process Simulator Victory Process is a general purpose layout driven 1D, 2D and 3D process simulator including Etching and deposition, Implantation, Diffusion and Oxidation simulation capabilities. Proprietary models, as well as public domain research models can be integrated into Victory Process using the open modeling interface. Key Features Fast 3D structure prototyping capability enables the in-depth physical analysis of specific processing issues Comprehensive set of diffusion models: Fermi, fullcpl, single-pair, and five-stream Physical oxidation simulation with stress analysis Extremely accurate and fast Monte Carlo implant simulation Efficient multi-threading of time critical operations of Monte Carlo implantation, diffusion, oxidation, and physical etching and deposition Sophisticated multi-particle flux models for physical deposition and etching with substrate material redeposition Open architecture allows easy introduction and modification of customer specific physical models Seamless link to 3D device simulators including structure mirroring, adaptive doping refinement and electrode specification Easy to learn, powerful debug mode and user friendly SUPREM-like syntax Athena compatibility Convenient calibration platform and fast process testing (no need to run 3D for calibration) when using in 2D mode Automatic switching from 1D, 2D and 3D mode Victory Process has two modes of operation: The Advanced structure editor mode, also called cell mode, is for fast proto-typing of 3D structures, such as image sensors, SRAM cells or FinFETs, where structure output meshing algorithms are optimized for loading into 3D device simulators for subsequent electrical characterization. Process simulator mode, is a full feature, level set based 1D, 2D and 3D process simulator, more suited to process based analysis, such as complex ion beam milling experiments and stress dependent oxidation analysis etc. This brochure first shows examples and features that are common to both modes of operation, such implantation and diffusion, and then describes features that are exclusive only to the advanced structure editor or to the advanced process simulator. Features Common to Advanced Structure Editor and Process Simulator Modes Analytical Ion Implantation Experimentally verified Pearson and dual Pearson implant models Extended implant moments tables with energy, dose, tilt, and rotation variations Accounts for multi-layer implant moments scaling Fully compatible with Athena/SSuprem 4 Monte Carlo Implantation Very accurate ion distributions in both crystalline and amorphous materials forming arbitrary geometries and multi-layer structures Accurately calibrated for wide range of energies starting as low as 200 eV and spanning to the high MeV range Accounts for all complex implantation effects such as reflections, re-implantation and shadowing even in deep trenches and voids Handles arbitrary implant directions and wafer orientations Applies 3D binary collision approximation which predicts channeling not only into primary channel but in all possible secondary channels and crystallographic planes Provides time efficient and cost effective solutions for important technology issues such as shallow junction formation, multiple implants and pre-amorphization, HALO implants, retrograde well formation, and well proximity effect Fully multi-threaded with run time reduction almost linearly proportional with number of CPUs